JPS6323386A - 半導体レ−ザ装置の組立方法 - Google Patents

半導体レ−ザ装置の組立方法

Info

Publication number
JPS6323386A
JPS6323386A JP16634587A JP16634587A JPS6323386A JP S6323386 A JPS6323386 A JP S6323386A JP 16634587 A JP16634587 A JP 16634587A JP 16634587 A JP16634587 A JP 16634587A JP S6323386 A JPS6323386 A JP S6323386A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser element
width
adhesive
convex portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16634587A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156555B2 (en]
Inventor
Hirokazu Fukuda
福田 広和
Koji Shinohara
篠原 宏爾
Yoshio Kawabata
川端 良雄
Yoshito Nishijima
西嶋 由人
Kosaku Yamamoto
山本 功作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16634587A priority Critical patent/JPS6323386A/ja
Publication of JPS6323386A publication Critical patent/JPS6323386A/ja
Publication of JPH0156555B2 publication Critical patent/JPH0156555B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP16634587A 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法 Granted JPS6323386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16634587A JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16634587A JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Publications (2)

Publication Number Publication Date
JPS6323386A true JPS6323386A (ja) 1988-01-30
JPH0156555B2 JPH0156555B2 (en]) 1989-11-30

Family

ID=15829655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16634587A Granted JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Country Status (1)

Country Link
JP (1) JPS6323386A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108867U (en]) * 1990-02-21 1991-11-08
US7781603B2 (en) 2004-09-30 2010-08-24 Toyo Boseki Kabushiki Kaisha Method for producing trimethylsilyl azide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134377U (en]) * 1975-04-18 1976-10-29
JPS5220782A (en) * 1975-08-11 1977-02-16 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor element mounting method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134377U (en]) * 1975-04-18 1976-10-29
JPS5220782A (en) * 1975-08-11 1977-02-16 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor element mounting method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108867U (en]) * 1990-02-21 1991-11-08
US7781603B2 (en) 2004-09-30 2010-08-24 Toyo Boseki Kabushiki Kaisha Method for producing trimethylsilyl azide

Also Published As

Publication number Publication date
JPH0156555B2 (en]) 1989-11-30

Similar Documents

Publication Publication Date Title
JP4432275B2 (ja) 光源装置
JP3850665B2 (ja) 半導体発光エミッタパッケージ
JP2001185763A (ja) 光半導体パッケージ
JPH0851247A (ja) 集積型半導体レーザ装置の製造方法,及び集積型半導体レーザ装置
JP2019134017A (ja) 発光装置
US20050063434A1 (en) Semiconductor laser diode having a PCB type lead frame
JP2003324216A (ja) 発光ダイオードランプ
JP3649939B2 (ja) ライン光源装置およびその製造方法
JP2678944B2 (ja) 半導体チツプを基板に結合する方法
WO2020031944A1 (ja) 半導体発光装置および半導体発光装置の製造方法
JPH08330672A (ja) 半導体レーザ装置
JPS6323386A (ja) 半導体レ−ザ装置の組立方法
JP4218396B2 (ja) 面発光装置
JPH0511470U (ja) 半導体レーザ用ヒートシンク
JPH09307018A (ja) 半導体素子およびその製造方法
JPS58207689A (ja) 半導体レ−ザ装置
JP2002372647A (ja) 光源装置
JP3186937B2 (ja) 半導体発光素子
JP3234993B2 (ja) 発光ダイオードチップ、およびこれを用いた発光ダイオードチップアレイ
JPH04352377A (ja) 半導体レーザ素子用サブマウント
CN220173476U (zh) 一种具有焊位稳定功能的单面电路板
JP4547063B2 (ja) レーザダイオード用マウント構造及びその実装方法
JPH01195068A (ja) 光プリントヘッド
JPH0770778B2 (ja) 半導体装置とその製造方法
JPH05291696A (ja) 半導体レーザ素子およびその作製方法